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NTD3055L170, NVD3055L170
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage (Note 3)
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 60 Vdc, V GS = 0 Vdc)
(V DS = 60 Vdc, V GS = 0 Vdc, T J = 150 ° C)
Gate ? Body Leakage Current (V GS = ± 15 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSS
60
?
?
?
?
?
53.6
?
?
?
?
?
1.0
10
± 100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V DS = V GS , I D = 250 m Adc)
Threshold Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? Resistance (Note 3)
(V GS = 5.0 Vdc, I D = 4.5 Adc)
Static Drain ? to ? Source On ? Voltage (Note 3)
(V GS = 5.0 Vdc, I D = 9.0 Adc)
(V GS = 5.0 Vdc, I D = 4.5 Adc, T J = 150 ° C)
Forward Transconductance (Note 3) (V DS = 8.0 Vdc, I D = 6.0 Adc)
V GS(th)
R DS(on)
V DS(on)
g FS
1.0
?
?
?
?
?
1.7
4.2
153
1.8
1.3
7.3
2.0
?
170
2.1
?
?
Vdc
mV/ ° C
m W
Vdc
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
195
70
29
275
100
42
pF
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
Gate Charge
(V DD = 30 Vdc, I D = 9.0 Adc,
V GS = 5.0 Vdc,
R G = 9.1 W ) (Note 3)
(V DS = 48 Vdc, I D = 9.0 Adc,
V GS = 5.0 Vdc) (Note 3)
t d(on)
t r
t d(off)
t f
Q T
Q 1
Q 2
?
?
?
?
?
?
?
9.7
69
10
38
4.7
1.4
2.9
20
150
20
80
10
?
?
ns
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = 9.0 Adc, V GS = 0 Vdc) (Note 3)
(I S = 9.0 Adc, V GS = 0 Vdc, T J = 150 ° C)
(I S = 9.0 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s) (Note 3)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
0.98
0.85
29.8
17.6
12.2
0.031
1.25
?
?
?
?
?
Vdc
ns
m C
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
NTD3055L170G
NTD3055L170 ? 1G
NTD3055L170T4G
NVD3055L170T4G*
Device
Package
DPAK
(Pb ? Free)
DPAK ? 3
(Pb ? Free)
DPAK
(Pb ? Free)
DPAK
(Pb ? Free)
Shipping ?
75 Units / Rail
75 Units / Rail
2500 / Tape & Reel
2500 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC ? Q101 Qualified and PPAP
Capable
http://onsemi.com
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相关代理商/技术参数
NTD3055L170-1
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
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功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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制造商:ON Semiconductor 功能描述:
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